TSMC and Taiwanese Scientists' Breakthrough: How an Atomic Interface Saves 2D Transistors from Degradation
🚀 TSMC and Taiwanese scientists have made a breakthrough in 2D electronics! A new method for creating transistors based on molybdenum disulfide (MoS₂) has been developed.
🔬 The core problem: standard insulators are poorly deposited on 2D materials and reduce their performance.
💡 The solution: creating an atomic buffer of aluminum oxide between MoS₂ and the HfO₂ dielectric.
📉 The result: dielectric thickness reduced to 1 nm without loss of electron mobility. This opens the way to chips significantly more efficient than silicon counterparts.
#TSMC #MoS2 #Semiconductors #TechNews #2DTransistors
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